IRFS3607TRLPBF MOSFET Power
Electronics High Voltage Low RDS on 55V 100A N Channel
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | |
Description:
This IRFS3607TRLPBF is a N-channel MOSFET designed for use in high
side switching applications. It is rated for a maximum drain-source
voltage of 60V, a drain current of 120A, and a maximum power
dissipation of 60W. It also has a low on-resistance and fast
switching speed which makes it suitable for high frequency
switching applications.
Parameter:
• Drain-Source Voltage: VDSS = 60V
• Drain Current: ID = 120A
• Maximum Power Dissipation: PD = 60W
• On-Resistance: RDS(ON) = 0.0014 Ohm
• Gate Charge: Qg = 25nC
• Operating Temperature Range: -55°C to +150°C
• Mounting Type: SMD
• Package/Case: TO-220
• Supplier Device Package: TO-220AB
• Switching Frequency: fsw = 65KHz
• Input Capacitance: Ciss = 900pF
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