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NDT2955 MOSFET Power Electronics Package TO-261-4 P-Channel Enhancement Mode Field Effect Transistor

Shenzhen Sai Collie Technology Co., Ltd.
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    Buy cheap NDT2955 MOSFET Power Electronics Package TO-261-4 P-Channel Enhancement Mode Field Effect Transistor from wholesalers
     
    Buy cheap NDT2955 MOSFET Power Electronics Package TO-261-4 P-Channel Enhancement Mode Field Effect Transistor from wholesalers
    • Buy cheap NDT2955 MOSFET Power Electronics Package TO-261-4 P-Channel Enhancement Mode Field Effect Transistor from wholesalers
    • Buy cheap NDT2955 MOSFET Power Electronics Package TO-261-4 P-Channel Enhancement Mode Field Effect Transistor from wholesalers

    NDT2955 MOSFET Power Electronics Package TO-261-4 P-Channel Enhancement Mode Field Effect Transistor

    Ask Lasest Price
    Brand Name : onsemi
    Model Number : NDT2955
    Price : Negotiable
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 999999
    Delivery Time : 1 - 3 days
    • Product Details
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    NDT2955 MOSFET Power Electronics Package TO-261-4 P-Channel Enhancement Mode Field Effect Transistor

    NDT2955 MOSFET Power Electronics
    Package TO-261-4 P-Channel Enhancement Mode Field Effect Transistor
    FET Type
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
    Rds On (Max) @ Id, Vgs
    300mOhm @ 2.5A, 10V
    Vgs(th) (Max) @ Id
    4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs
    15 nC @ 10 V
    Vgs (Max)
    ±20V
    Input Capacitance (Ciss) (Max) @ Vds
    601 pF @ 30 V
    FET Feature
    -
    Power Dissipation (Max)
    3W (Ta)
    Operating Temperature
    -55°C ~ 150°C (TJ)
    Mounting Type
    Supplier Device Package
    SOT-223-4
    Package / Case
    General Description
    This 60 V P−Channel MOSFET is produced using onsemi’s high voltage Trench process. It has been optimized for power management plications.
    Features
    • −2.5 A, −60 V
    ♦ RDS(ON) = 300 m @ VGS = −10 V
    ♦ RDS(ON) = 500 m @ VGS = −4.5 V
    • High Density Cell Design for Extremely Low RDS(ON).
    • High Power and Current Handling Capability in a Widely Used
    Surface Mount Package
    • This is a Pb−Free Device
    Applications
    • DC/DC Converter
    • Power Management

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    • SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
    • Goods are ensured the highest quality possible and are delivered to our customers all over the world with speed and precision.


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    • We will try to respond as quickly as possible. But due to time zone difference, please allow up to 24 hours to get your mail replied. The products were tested by some devices or software, we ensure that there is no quality problems.
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    Quality NDT2955 MOSFET Power Electronics Package TO-261-4 P-Channel Enhancement Mode Field Effect Transistor for sale
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