NTS4173PT1G SC-70 MOSFET Power
Electronics N-Channel Enhancement Mode Transistor Threshold Voltage
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The NTS4173PT1G is a power MOSFET from ON Semiconductor. This discrete device is housed in a SC-70 package, which is a very small surface-mount plastic package. It has three terminals: the source, gate, and drain. The NTS4173PT1G is a N-channel MOSFET and is ideal for low-voltage, high-speed switching applications. This device provides extremely low on-resistance and is capable of operating at very high currents.
It also has a low gate charge and excellent switching performance. The NTS4173PT1G is designed to provide superior performance in a wide range of applications, including DC-DC converters, power management, motor control, and power switching. With its superior features and easy-to-use design, it is an ideal choice for any application that requires high performance and reliability.
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