IPD60R2K1CEAUMA1 MOSFET Power Electronics
Product Description:
The IPD60R2K1CEAUMA1 is a N-channel Power MOSFET, optimized for
power switching applications. This device is designed using
advanced Trench MOSFET technology for excellent RDS(ON) and low
gate charge. It provides superior switching performance with fast
switching times and low-level gate charge. With a wide range of
VDSS, this device is suitable for a variety of power applications.
Features:
• N-Channel Power MOSFET
• Advanced Trench MOSFET technology
• Optimized for power switching applications
• Low RDS(ON)
• Low gate charge
• Fast switching times
• Low-level gate charge
• Wide range of VDSS
• Suitable for a variety of power applications
Specifications:
• Drain-Source Voltage (VDSS): 60V
• Drain Current (ID): 2A
• RDS(ON): 1.45mΩ
• Gate-Source Voltage (VGS): ±20V
• Maximum Power Dissipation (PD): 2.2W
• Operating Temperature: -55°C to +150°C
Product Status | | |
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | | |
Base Product Number | |
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