Product Listing:
IRF630NPBF MOSFET Power Electronics
Description:
The IRF630NPBF MOSFET Power Electronics from Infineon Technologies
is a N-channel enhancement-mode power MOSFET designed for use in
low-voltage power applications. This device offers excellent
switching performance with low gate and drain-source charge, and
low on-state resistance. It has a maximum drain-source breakdown
voltage of 100V, a maximum drain current of 5A and a maximum power
dissipation of 6W. This device is also RoHS compliant and is
suitable for use in numerous commercial applications.
Features:
- N-channel enhancement-mode power MOSFET
- Maximum drain-source breakdown voltage: 100V
- Maximum drain current: 5A
- Maximum power dissipation: 6W
- Low gate and drain-source charge
- Low on-state resistance
- RoHS compliant
- Suitable for use in numerous commercial applications
Package: TO-220AB
Manufacturer: Infineon Technologies
Order Code: IRF630NPBF
Product Status | | |
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | | |
Base Product Number | |
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