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Brand Name : | Infineon |
Model Number : | IPD031N06L3GATMA1 |
Price : | Negotiable |
Payment Terms : | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
Supply Ability : | 999999 |
Delivery Time : | 1-3 days |
IPD031N06L3GATMA1 MOSFET Power Electronics N-Channel OptiMOSTW3 Package PG-TO252-3
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 3.1mOhm @ 100A, 10V | |
Vgs(th) (Max) @ Id | 2.2V @ 93µA | |
Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 4.5 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 30 V | |
FET Feature | - | |
Power Dissipation (Max) | 167W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | PG-TO252-3 | |
Package / Case |
Features:
Ideal for high frequency switching and sync. rec.
Optimized technology for DC/DC converters
Excellent gate charge x R san) product (FOM)
Very low on-resistance Ros(an)
N-channel, logic level
100% avalanche tested
Pb-free plating; RoHS compliant
Qualified according to JEDEC1' for target applications
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