SI7119DN-T1-E3 High Performance MOSFET Power Electronics P-Channel
200 V 3.8A Surface Mount
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | |
Product Features:
-N-Channel Enhancement Mode
-Low RDS(on)
-Low Qg
-Fast Switching
-Low Threshold
-Optimized for Mobile and Battery-Powered Applications
Specifications:
-VDS (V): -20V
-VGS (V): -4.5 to -6V
-RDS(on) (mOhm): <1.3
-Qg (nC): <14
-Threshold (V): -2.3V
-Package Type: DFN-6
-Channel Type: N-Channel
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