SQD19P06-60L_GE3 MOSFET Power Electronics
P-Channel 60 V 20A 46W Surface Mount Package TO-252AA
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | |
The SQD19P06-60L_GE3 is an N-Channel MOSFET from SQD Corporation.
It features a low on-resistance of just 6.0 mΩ, making it ideal for
a wide range of applications. It also has a high level of OFF-state
leakage current, making it suitable for high-efficiency power
supplies. With its low gate charge, this MOSFET is ideal for
high-frequency switching applications.
Features:
• Low on-resistance of 6.0 mΩ
• High OFF-state leakage current
• Low gate charge
• Suitable for high-frequency switching applications
• RoHS compliant
Specifications:
• Part Number: SQD19P06-60L_GE3
• Type: N-Channel MOSFET
• On-Resistance: 6.0 mΩ
• OFF-State Leakage Current: 4.2 mA
• Gate Charge: 15 nC
• Operating Temperature Range: -55°C to 150°C
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